EEPROM

EEPROM Silicon Storage Technology 39VF512.

EEPROM or E²PROM stands for Electrically Erasable Programmable Read-Only Memory (electrically erasable programmable ROM). ROM memory that can be programmed, erased and reprogrammed electrically, unlike the EPROM that has to be erased by a device that emits ultraviolet rays. They are non-volatile memories.

The memory cells of an EEPROM are made up of a MOS transistor, which has a floating gate (SAMOS structure), its normal state is cut off and the output provides a logic 1.

Although an EEPROM can be read an unlimited number of times, it can only be erased and reprogrammed between 100,000 and a million times.

These devices typically communicate using protocols such as I²C, SPI, and Microwire. At other times, it is integrated into chips such as microcontrollers and DSPs to achieve greater speed.

Flash memory is an advanced form of EEPROM created by Dr. Fujio Masuoka while working for Toshiba in 1984 and presented at the 1984 IEEE Electronic Appliances Meeting. Intel saw the potential of the invention and in 1988 released the first commercial NOR chip.