Conteo de transistores

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El número de transistores es el número de transistores en un dispositivo electrónico (normalmente en un único sustrato o chip de silicio). Es la medida más común de la complejidad de los circuitos integrados (aunque la mayoría de los transistores en los microprocesadores modernos están contenidos en memorias caché, que consisten principalmente en los mismos circuitos de celdas de memoria replicados muchas veces). La velocidad a la que ha aumentado el número de transistores MOS generalmente sigue la ley de Moore, que observa que el número de transistores se duplica aproximadamente cada dos años. Sin embargo, al ser directamente proporcional al área de un chip, el número de transistores no representa cuán avanzada es la tecnología de fabricación correspondiente. Una mejor indicación de esto es la densidad de transistores, que es la relación entre el número de transistores de un semiconductor y el área de su chip.

A partir de 2023, el chip de memoria flash con mayor cantidad de transistores es el V-NAND de 232 capas y 16 chips de Micron, con 2 terabytes (apilados en 3D) y 5,3 billones de MOSFET de compuerta flotante (3 bits por transistor).

El procesador de aprendizaje profundo Wafer Scale Engine 2 de Cerebras, con el mayor número de transistores en un solo chip hasta 2020, tiene 2,6 billones de MOSFET en 84 campos expuestos (die) en una oblea, fabricados con el proceso FinFET de 7 nm de TSMC.

A partir de 2024, la GPU con el mayor número de transistores será el acelerador B100 de Nvidia basado en Blackwell, construido sobre el nodo de proceso 4NP personalizado de TSMC y con un total de 208 mil millones de MOSFET.

El recuento más alto de transistores en un microprocesador de consumo a junio de 2023 es de 134 mil millones de transistores, en el SoC M2 Ultra de doble matriz basado en ARM de Apple, que se fabrica utilizando el proceso de fabricación de semiconductores de 5 nm de TSMC.

Año Componente Nombre Número de MOSFETs
(en trillones) 		Observaciones
2022 Memoria Flash Módulo V-NAND de Micron 5.3 paquete apilado de 16 232 capas 3D NAND muere
2020 cualquier procesador Wafer Scale Engine 2 2.6 wafer-scale design of 84 exposed fields (dies)
2024 GPU Nvidia B100 0,208 Utiliza dos reticle limit dies, con 104 mil millones de transistores cada uno, unidos y actuando como una sola pieza monolítica grande de silicio
2023 microprocesador
(comercial) 		M2 Ultra 0.134 SoC usando dos mueres unidos con un puente de alta velocidad
2020 DLP Coloso Mk2 GC200 0,059 Una UIP en contraste con CPU y GPU

En términos de sistemas informáticos que constan de numerosos circuitos integrados, la supercomputadora con el mayor número de transistores en 2016 fue la Sunway TaihuLight, diseñada por los chinos, que tiene para todas las CPU/nodos combinados "alrededor de 400 billones de transistores en la parte de procesamiento del hardware" y "la DRAM incluye alrededor de 12 cuatrillones de transistores, y eso es aproximadamente el 97 por ciento de todos los transistores". A modo de comparación, la computadora más pequeña, en 2018 eclipsada por un grano de arroz, tenía del orden de 100.000 transistores. Las primeras computadoras experimentales de estado sólido tenían tan solo 130 transistores, pero utilizaban grandes cantidades de lógica de diodos. La primera computadora de nanotubos de carbono tenía 178 transistores y era una computadora de un conjunto de instrucciones de 1 bit, mientras que una posterior es de 16 bits (su conjunto de instrucciones es RISC-V de 32 bits).

Los chips de transistores iónicos (procesadores analógicos limitados basados en agua) tienen hasta cientos de transistores de este tipo.

Estimaciones del número total de transistores fabricados:

  • Hasta 2014: 2.9×1021
  • Hasta 2018: 1.3×1022

Conteo transistor

Parcela de transistor MOS cuenta para microprocesadores con fechas de introducción. La curva muestra la duplicación cada dos años, según la ley de Moore.

Microprocesadores

Un microprocesador incorpora las funciones de la unidad central de procesamiento de una computadora en un único circuito integrado. Es un dispositivo programable y multipropósito que acepta datos digitales como entrada, los procesa según instrucciones almacenadas en su memoria y proporciona resultados como salida.

El desarrollo de la tecnología de circuitos integrados MOS en la década de 1960 condujo al desarrollo de los primeros microprocesadores. El MP944 de 20 bits, desarrollado por Garrett AiResearch para el caza F-14 Tomcat de la Armada de los EE. UU. en 1970, es considerado por su diseñador Ray Holt como el primer microprocesador. Era un microprocesador multichip, fabricado en seis chips MOS. Sin embargo, fue clasificado por la Armada hasta 1998. El Intel 4004 de 4 bits, lanzado en 1971, fue el primer microprocesador de un solo chip.

Los microprocesadores modernos suelen incluir memorias caché en el chip. La cantidad de transistores que se utilizan para estas memorias caché suele superar con creces la cantidad de transistores que se utilizan para implementar la lógica del microprocesador (es decir, sin contar la caché). Por ejemplo, el último chip DEC Alpha utiliza el 90 % de sus transistores para la caché.

Processor Transistor count Year Designer Process
(nm) 		Area (mm2) Transistor
density
(tr./mm2)
MP944 (20-bit, 6-chip, 28 chips total) 74,442 (5,360 excl. ROM & RAM) 1970 Garrett AiResearch ? ? ?
Intel 4004 (4-bit, 16-pin) 2,250 1971 Intel 10,000 nm 12 mm2 188
TMX 1795 (8-bit, 24-pin) 3,078 1971 Texas Instruments ? 30.64 mm2 100.5
Intel 8008 (8-bit, 18-pin) 3,500 1972 Intel 10,000 nm 14 mm2 250
NEC μCOM-4 (4-bit, 42-pin) 2,500 1973 NEC 7,500 nm ? ?
Toshiba TLCS-12 (12-bit) 11,000+ 1973 Toshiba 6,000 nm 32 mm2 340+
Intel 4040 (4-bit, 16-pin) 3,000 1974 Intel 10,000 nm 12 mm2 250
Motorola 6800 (8-bit, 40-pin) 4,100 1974 Motorola 6,000 nm 16 mm2 256
Intel 8080 (8-bit, 40-pin) 6,000 1974 Intel 6,000 nm 20 mm2 300
TMS 1000 (4-bit, 28-pin) 8,000 1974 Texas Instruments 8,000 nm 11 mm2 730
MOS Technology 6502 (8-bit, 40-pin) 4,528 1975 MOS Technology 8,000 nm 21 mm2 216
Intersil IM6100 (12-bit, 40-pin; clone of PDP-8) 4,000 1975 Intersil ? ? ?
CDP 1801 (8-bit, 2-chip, 40-pin) 5,000 1975 RCA ? ? ?
RCA 1802 (8-bit, 40-pin) 5,000 1976 RCA 5,000 nm 27 mm2 185
Zilog Z80 (8-bit, 4-bit ALU, 40-pin) 8,500 1976 Zilog 4,000 nm 18 mm2 470
Intel 8085 (8-bit, 40-pin) 6,500 1976 Intel 3,000 nm 20 mm2 325
TMS9900 (16-bit) 8,000 1976 Texas Instruments ? ? ?
Bellmac-8 (8-bit) 7,000 1977 Bell Labs 5,000 nm ? ?
Motorola 6809 (8-bit with some 16-bit features, 40-pin) 9,000 1978 Motorola 5,000 nm 21 mm2 430
Intel 8086 (16-bit, 40-pin) 29,000 1978 Intel 3,000 nm 33 mm2 880
Zilog Z8000 (16-bit) 17,500 1979 Zilog ? ? ?
Intel 8088 (16-bit, 8-bit data bus) 29,000 1979 Intel 3,000 nm 33 mm2 880
Motorola 68000 (16/32-bit, 32-bit registers, 16-bit ALU) 68,000 1979 Motorola 3,500 nm 44 mm2 1,550
Intel 8051 (8-bit, 40-pin) 50,000 1980 Intel ? ? ?
WDC 65C02 11,500 1981 WDC 3,000 nm 6 mm2 1,920
ROMP (32-bit) 45,000 1981 IBM 2,000 nm 58.52 mm2 770
Intel 80186 (16-bit, 68-pin) 55,000 1982 Intel 3,000 nm 60 mm2 920
Intel 80286 (16-bit, 68-pin) 134,000 1982 Intel 1,500 nm 49 mm2 2,730
WDC 65C816 (8/16-bit) 22,000 1983 WDC 3,000 nm 9 mm2 2,400
NEC V20 63,000 1984 NEC ? ? ?
Motorola 68020 (32-bit; 114 pins used) 190,000 1984 Motorola 2,000 nm 85 mm2 2,200
Intel 80386 (32-bit, 132-pin; no cache) 275,000 1985 Intel 1,500 nm 104 mm2 2,640
ARM 1 (32-bit; no cache) 25,000 1985 Acorn 3,000 nm 50 mm2 500
Novix NC4016 (16-bit) 16,000 1985 Harris Corporation 3,000 nm ? ?
SPARC MB86900 (32-bit; no cache) 110,000 1986 Fujitsu 1,200 nm ? ?
NEC V60 (32-bit; no cache) 375,000 1986 NEC 1,500 nm ? ?
ARM 2 (32-bit, 84-pin; no cache) 27,000 1986 Acorn 2,000 nm 30.25 mm2 890
Z80000 (32-bit; very small cache) 91,000 1986 Zilog ? ? ?
NEC V70 (32-bit; no cache) 385,000 1987 NEC 1,500 nm ? ?
Hitachi Gmicro/200 730,000 1987 Hitachi 1,000 nm ? ?
Motorola 68030 (32-bit, very small caches) 273,000 1987 Motorola 800 nm 102 mm2 2,680
TI Explorer's 32-bit Lisp machine chip 553,000 1987 Texas Instruments 2,000 nm ? ?
DEC WRL MultiTitan 180,000 1988 DEC WRL 1,500 nm 61 mm2 2,950
Intel i960 (32-bit, 33-bit memory subsystem, no cache) 250,000 1988 Intel 1,500 nm ? ?
Intel i960CA (32-bit, cache) 600,000 1989 Intel 800 nm 143 mm2 4,200
Intel i860 (32/64-bit, 128-bit SIMD, cache, VLIW) 1,000,000 1989 Intel ? ? ?
Intel 80486 (32-bit, 8 KB cache) 1,180,235 1989 Intel 1,000 nm 173 mm2 6,822
ARM 3 (32-bit, 4 KB cache) 310,000 1989 Acorn 1,500 nm 87 mm2 3,600
POWER1 (9-chip module, 72 kB of cache) 6,900,000 1990 IBM 1,000 nm 1,283.61 mm2 5,375
Motorola 68040 (32-bit, 8 KB caches) 1,200,000 1990 Motorola 650 nm 152 mm2 7,900
R4000 (64-bit, 16 KB of caches) 1,350,000 1991 MIPS 1,000 nm 213 mm2 6,340
ARM 6 (32-bit, no cache for this 60 variant) 35,000 1991 ARM 800 nm ? ?
Hitachi SH-1 (32-bit, no cache) 600,000 1992 Hitachi 800 nm 100 mm2 6,000
Intel i960CF (32-bit, cache) 900,000 1992 Intel ? 125 mm2 7,200
Alpha 21064 (64-bit, 290-pin; 16 KB of caches) 1,680,000 1992 DEC 750 nm 233.52 mm2 7,190
Hitachi HARP-1 (32-bit, cache) 2,800,000 1993 Hitachi 500 nm 267 mm2 10,500
Pentium (32-bit, 16 KB of caches) 3,100,000 1993 Intel 800 nm 294 mm2 10,500
POWER2 (8-chip module, 288 kB of cache) 23,037,000 1993 IBM 720 nm 1,217.39 mm2 18,923
ARM700 (32-bit; 8 KB cache) 578,977 1994 ARM 700 nm 68.51 mm2 8,451
MuP21 (21-bit, 40-pin; includes video) 7,000 1994 Offete Enterprises 1,200 nm ? ?
Motorola 68060 (32-bit, 16 KB of caches) 2,500,000 1994 Motorola 600 nm 218 mm2 11,500
PowerPC 601 (32-bit, 32 KB of caches) 2,800,000 1994 Apple, IBM, Motorola 600 nm 121 mm2 23,000
PowerPC 603 (32-bit, 16 KB of caches) 1,600,000 1994 Apple, IBM, Motorola 500 nm 84.76 mm2 18,900
PowerPC 603e (32-bit, 32 KB of caches) 2,600,000 1995 Apple, IBM, Motorola 500 nm 98 mm2 26,500
Alpha 21164 EV5 (64-bit, 112 kB cache) 9,300,000 1995 DEC 500 nm 298.65 mm2 31,140
SA-110 (32-bit, 32 KB of caches) 2,500,000 1995 Acorn, DEC, Apple 350 nm 50 mm2 50,000
Pentium Pro (32-bit, 16 KB of caches; L2 cache on-package, but on separate die) 5,500,000 1995 Intel 500 nm 307 mm2 18,000
PA-8000 64-bit, no cache 3,800,000 1995 HP 500 nm 337.69 mm2 11,300
Alpha 21164A EV56 (64-bit, 112 kB cache) 9,660,000 1996 DEC 350 nm 208.8 mm2 46,260
AMD K5 (32-bit, caches) 4,300,000 1996 AMD 500 nm 251 mm2 17,000
Pentium II Klamath (32-bit, 64-bit SIMD, caches) 7,500,000 1997 Intel 350 nm 195 mm2 39,000
AMD K6 (32-bit, caches) 8,800,000 1997 AMD 350 nm 162 mm2 54,000
F21 (21-bit; includes e.g. video) 15,000 1997 Offete Enterprises ? ? ?
AVR (8-bit, 40-pin; w/memory) 140,000 (48,000
excl. memory) 		1997 Nordic VLSI/Atmel ? ? ?
Pentium II Deschutes (32-bit, large cache) 7,500,000 1998 Intel 250 nm 113 mm2 66,000
Alpha 21264 EV6 (64-bit) 15,200,000 1998 DEC 350 nm 313.96 mm2 48,400
Alpha 21164PC PCA57 (64-bit, 48 kB cache) 5,700,000 1998 Samsung 280 nm 100.5 mm2 56,700
Hitachi SH-4 (32-bit, caches) 3,200,000 1998 Hitachi 250 nm 57.76 mm2 55,400
ARM 9TDMI (32-bit, no cache) 111,000 1999 Acorn 350 nm 4.8 mm2 23,100
Pentium III Katmai (32-bit, 128-bit SIMD, caches) 9,500,000 1999 Intel 250 nm 128 mm2 74,000
Emotion Engine (64-bit, 128-bit SIMD, cache) 10,500,000
– 13,500,000 		1999 Sony, Toshiba 250 nm 239.7 mm2 43,800
56,300
Pentium II Mobile Dixon (32-bit, caches) 27,400,000 1999 Intel 180 nm 180 mm2 152,000
AMD K6-III (32-bit, caches) 21,300,000 1999 AMD 250 nm 118 mm2 181,000
AMD K7 (32-bit, caches) 22,000,000 1999 AMD 250 nm 184 mm2 120,000
Gekko (32-bit, large cache) 21,000,000 2000 IBM, Nintendo 180 nm 43 mm2 490,000 (check)
Pentium III Coppermine (32-bit, large cache) 21,000,000 2000 Intel 180 nm 80 mm2 263,000
Pentium 4 Willamette (32-bit, large cache) 42,000,000 2000 Intel 180 nm 217 mm2 194,000
SPARC64 V (64-bit, large cache) 191,000,000 2001 Fujitsu 130 nm 290 mm2 659,000
Pentium III Tualatin (32-bit, large cache) 45,000,000 2001 Intel 130 nm 81 mm2 556,000
Pentium 4 Northwood (32-bit, large cache) 55,000,000 2002 Intel 130 nm 145 mm2 379,000
Itanium 2 McKinley (64-bit, large cache) 220,000,000 2002 Intel 180 nm 421 mm2 523,000
Alpha 21364 (64-bit, 946-pin, SIMD, very large caches) 152,000,000 2003 DEC 180 nm 397 mm2 383,000
AMD K7 Barton (32-bit, large cache) 54,300,000 2003 AMD 130 nm 101 mm2 538,000
AMD K8 (64-bit, large cache) 105,900,000 2003 AMD 130 nm 193 mm2 548,700
Pentium M Banias (32-bit) 77,000,000 2003 Intel 130 nm 83 mm2 928,000
Itanium 2 Madison 6M (64-bit) 410,000,000 2003 Intel 130 nm 374 mm2 1,096,000
PlayStation 2 single chip (CPU + GPU) 53,500,000 2003 Sony, Toshiba 90 nm
130 nm 		86 mm2 622,100
Pentium 4 Prescott (32-bit, large cache) 112,000,000 2004 Intel 90 nm 110 mm2 1,018,000
Pentium M Dothan (32-bit) 144,000,000 2004 Intel 90 nm 87 mm2 1,655,000
SPARC64 V+ (64-bit, large cache) 400,000,000 2004 Fujitsu 90 nm 294 mm2 1,360,000
Itanium 2 (64-bit;9 MB cache) 592,000,000 2004 Intel 130 nm 432 mm2 1,370,000
Pentium 4 Prescott-2M (32-bit, large cache) 169,000,000 2005 Intel 90 nm 143 mm2 1,182,000
Pentium D Smithfield (64-bit, large cache) 228,000,000 2005 Intel 90 nm 206 mm2 1,107,000
Xenon (64-bit, 128-bit SIMD, large cache) 165,000,000 2005 IBM 90 nm ? ?
Cell (32-bit, cache) 250,000,000 2005 Sony, IBM, Toshiba 90 nm 221 mm2 1,131,000
Pentium 4 Cedar Mill (32-bit, large cache) 184,000,000 2006 Intel 65 nm 90 mm2 2,044,000
Pentium D Presler (64-bit, large cache) 362,000,000 2006 Intel 65 nm 162 mm2 2,235,000
Core 2 Duo Conroe (dual-core 64-bit, large caches) 291,000,000 2006 Intel 65 nm 143 mm2 2,035,000
Dual-core Itanium 2 (64-bit, SIMD, large caches) 1,700,000,000 2006 Intel 90 nm 596 mm2 2,852,000
AMD K10 quad-core 2M L3 (64-bit, large caches) 463,000,000 2007 AMD 65 nm 283 mm2 1,636,000
ARM Cortex-A9 (32-bit, (optional) SIMD, caches) 26,000,000 2007 ARM 45 nm 31 mm2 839,000
Core 2 Duo Wolfdale (dual-core 64-bit, SIMD, caches) 411,000,000 2007 Intel 45 nm 107 mm2 3,841,000
POWER6 (64-bit, large caches) 789,000,000 2007 IBM 65 nm 341 mm2 2,314,000
Core 2 Duo Allendale (dual-core 64-bit, SIMD, large caches) 169,000,000 2007 Intel 65 nm 111 mm2 1,523,000
Uniphier 250,000,000 2007 Matsushita 45 nm ? ?
SPARC64 VI (64-bit, SIMD, large caches) 540,000,000 2007 Fujitsu 90 nm 421 mm2 1,283,000
Core 2 Duo Wolfdale 3M (dual-core 64-bit, SIMD, large caches) 230,000,000 2008 Intel 45 nm 83 mm2 2,771,000
Core i7 (quad-core 64-bit, SIMD, large caches) 731,000,000 2008 Intel 45 nm 263 mm2 2,779,000
AMD K10 quad-core 6M L3 (64-bit, SIMD, large caches) 758,000,000 2008 AMD 45 nm 258 mm2 2,938,000
Atom (32-bit, large cache) 47,000,000 2008 Intel 45 nm 24 mm2 1,958,000
SPARC64 VII (64-bit, SIMD, large caches) 600,000,000 2008 Fujitsu 65 nm 445 mm2 1,348,000
Six-core Xeon 7400 (64-bit, SIMD, large caches) 1,900,000,000 2008 Intel 45 nm 503 mm2 3,777,000
Six-core Opteron 2400 (64-bit, SIMD, large caches) 904,000,000 2009 AMD 45 nm 346 mm2 2,613,000
SPARC64 VIIIfx (64-bit, SIMD, large caches) 760,000,000 2009 Fujitsu 45 nm 513 mm2 1,481,000
Atom (Pineview) 64-bit, 1-core, 512 kB L2 cache 123,000,000 2010 Intel 45 nm 66 mm2 1,864,000
Atom (Pineview) 64-bit, 2-core, 1 MB L2 cache 176,000,000 2010 Intel 45 nm 87 mm2 2,023,000
SPARC T3 (16-core 64-bit, SIMD, large caches) 1,000,000,000 2010 Sun/Oracle 40 nm 377 mm2 2,653,000
Six-core Core i7 (Gulftown) 1,170,000,000 2010 Intel 32 nm 240 mm2 4,875,000
POWER7 32M L3 (8-core 64-bit, SIMD, large caches) 1,200,000,000 2010 IBM 45 nm 567 mm2 2,116,000
Quad-core z196 (64-bit, very large caches) 1,400,000,000 2010 IBM 45 nm 512 mm2 2,734,000
Quad-core Itanium Tukwila (64-bit, SIMD, large caches) 2,000,000,000 2010 Intel 65 nm 699 mm2 2,861,000
Xeon Nehalem-EX (8-core 64-bit, SIMD, large caches) 2,300,000,000 2010 Intel 45 nm 684 mm2 3,363,000
SPARC64 IXfx (64-bit, SIMD, large caches) 1,870,000,000 2011 Fujitsu 40 nm 484 mm2 3,864,000
Quad-core + GPU Core i7 (64-bit, SIMD, large caches) 1,160,000,000 2011 Intel 32 nm 216 mm2 5,370,000
Six-core Core i7/8-core Xeon E5
(Sandy Bridge-E/EP) (64-bit, SIMD, large caches) 		2,270,000,000 2011 Intel 32 nm 434 mm2 5,230,000
Xeon Westmere-EX (10-core 64-bit, SIMD, large caches) 2,600,000,000 2011 Intel 32 nm 512 mm2 5,078,000
Atom "Medfield" (64-bit) 432,000,000 2012 Intel 32 nm 64 mm2 6,750,000
SPARC64 X (64-bit, SIMD, caches) 2,990,000,000 2012 Fujitsu 28 nm 600 mm2 4,983,000
AMD Bulldozer (8-core 64-bit, SIMD, caches) 1,200,000,000 2012 AMD 32 nm 315 mm2 3,810,000
Quad-core + GPU AMD Trinity (64-bit, SIMD, caches) 1,303,000,000 2012 AMD 32 nm 246 mm2 5,297,000
Quad-core + GPU Core i7 Ivy Bridge (64-bit, SIMD, caches) 1,400,000,000 2012 Intel 22 nm 160 mm2 8,750,000
POWER7+ (8-core 64-bit, SIMD, 80 MB L3 cache) 2,100,000,000 2012 IBM 32 nm 567 mm2 3,704,000
Six-core zEC12 (64-bit, SIMD, large caches) 2,750,000,000 2012 IBM 32 nm 597 mm2 4,606,000
Itanium Poulson (8-core 64-bit, SIMD, caches) 3,100,000,000 2012 Intel 32 nm 544 mm2 5,699,000
Xeon Phi (61-core 32-bit, 512-bit SIMD, caches) 5,000,000,000 2012 Intel 22 nm 720 mm2 6,944,000
Apple A7 (dual-core 64/32-bit ARM64, "mobile SoC", SIMD, caches) 1,000,000,000 2013 Apple 28 nm 102 mm2 9,804,000
Six-core Core i7 Ivy Bridge E (64-bit, SIMD, caches) 1,860,000,000 2013 Intel 22 nm 256 mm2 7,266,000
POWER8 (12-core 64-bit, SIMD, caches) 4,200,000,000 2013 IBM 22 nm 650 mm2 6,462,000
Xbox One main SoC (64-bit, SIMD, caches) 5,000,000,000 2013 Microsoft, AMD 28 nm 363 mm2 13,770,000
Quad-core + GPU Core i7 Haswell (64-bit, SIMD, caches) 1,400,000,000 2014 Intel 22 nm 177 mm2 7,910,000
Apple A8 (dual-core 64/32-bit ARM64 "mobile SoC", SIMD, caches) 2,000,000,000 2014 Apple 20 nm 89 mm2 22,470,000
Core i7 Haswell-E (8-core 64-bit, SIMD, caches) 2,600,000,000 2014 Intel 22 nm 355 mm2 7,324,000
Apple A8X (tri-core 64/32-bit ARM64 "mobile SoC", SIMD, caches) 3,000,000,000 2014 Apple 20 nm 128 mm2 23,440,000
Xeon Ivy Bridge-EX (15-core 64-bit, SIMD, caches) 4,310,000,000 2014 Intel 22 nm 541 mm2 7,967,000
Xeon Haswell-E5 (18-core 64-bit, SIMD, caches) 5,560,000,000 2014 Intel 22 nm 661 mm2 8,411,000
Quad-core + GPU GT2 Core i7 Skylake K (64-bit, SIMD, caches) 1,750,000,000 2015 Intel 14 nm 122 mm2 14,340,000
Dual-core + GPU Iris Core i7 Broadwell-U (64-bit, SIMD, caches) 1,900,000,000 2015 Intel 14 nm 133 mm2 14,290,000
Apple A9 (dual-core 64/32-bit ARM64 "mobile SoC", SIMD, caches) 2,000,000,000+ 2015 Apple 14 nm
(Samsung) 		96 mm2
(Samsung) 		20,800,000+
16 nm
(TSMC) 		104.5 mm2
(TSMC) 		19,100,000+
Apple A9X (dual core 64/32-bit ARM64 "mobile SoC", SIMD, caches) 3,000,000,000+ 2015 Apple 16 nm 143.9 mm2 20,800,000+
IBM z13 (64-bit, caches) 3,990,000,000 2015 IBM 22 nm 678 mm2 5,885,000
IBM z13 Storage Controller 7,100,000,000 2015 IBM 22 nm 678 mm2 10,472,000
SPARC M7 (32-core 64-bit, SIMD, caches) 10,000,000,000 2015 Oracle 20 nm ? ?
Core i7 Broadwell-E (10-core 64-bit, SIMD, caches) 3,200,000,000 2016 Intel 14 nm 246 mm2 13,010,000
Apple A10 Fusion (quad-core 64/32-bit ARM64 "mobile SoC", SIMD, caches) 3,300,000,000 2016 Apple 16 nm 125 mm2 26,400,000
HiSilicon Kirin 960 (octa-core 64/32-bit ARM64 "mobile SoC", SIMD, caches) 4,000,000,000 2016 Huawei 16 nm 110.00 mm2 36,360,000
Xeon Broadwell-E5 (22-core 64-bit, SIMD, caches) 7,200,000,000 2016 Intel 14 nm 456 mm2 15,790,000
Xeon Phi (72-core 64-bit, 512-bit SIMD, caches) 8,000,000,000 2016 Intel 14 nm 683 mm2 11,710,000
Zip CPU (32-bit, for FPGAs) 1,286 6-LUTs 2016 Gisselquist Technology ? ? ?
Qualcomm Snapdragon 835 (octa-core 64/32-bit ARM64 "mobile SoC", SIMD, caches) 3,000,000,000 2016 Qualcomm 10 nm 72.3 mm2 41,490,000
Apple A11 Bionic (hexa-core 64/32-bit ARM64 "mobile SoC", SIMD, caches) 4,300,000,000 2017 Apple 10 nm 89.23 mm2 48,190,000
AMD Zen CCX (core complex unit: 4 cores, 8 MB L3 cache) 1,400,000,000 2017 AMD 14 nm
(GF 14LPP) 		44 mm2 31,800,000
AMD Zeppelin SoC Ryzen (64-bit, SIMD, caches) 4,800,000,000 2017 AMD 14 nm 192 mm2 25,000,000
AMD Ryzen 5 1600 Ryzen (64-bit, SIMD, caches) 4,800,000,000 2017 AMD 14 nm 213 mm2 22,530,000
IBM z14 (64-bit, SIMD, caches) 6,100,000,000 2017 IBM 14 nm 696 mm2 8,764,000
IBM z14 Storage Controller (64-bit) 9,700,000,000 2017 IBM 14 nm 696 mm2 13,940,000
HiSilicon Kirin 970 (octa-core 64/32-bit ARM64 "mobile SoC", SIMD, caches) 5,500,000,000 2017 Huawei 10 nm 96.72 mm2 56,900,000
Xbox One X (Project Scorpio) main SoC (64-bit, SIMD, caches) 7,000,000,000 2017 Microsoft, AMD 16 nm 360 mm2 19,440,000
Xeon Platinum 8180 (28-core 64-bit, SIMD, caches) 8,000,000,000 2017 Intel 14 nm ? ?
Xeon (unspecified) 7,100,000,000 2017 Intel 14 nm 672 mm2 10,570,000
POWER9 (64-bit, SIMD, caches) 8,000,000,000 2017 IBM 14 nm 695 mm2 11,500,000
Freedom U500 Base Platform Chip (E51, 4×U54) RISC-V (64-bit, caches) 250,000,000 2017 SiFive 28 nm ~30 mm2 8,330,000
SPARC64 XII (12-core 64-bit, SIMD, caches) 5,450,000,000 2017 Fujitsu 20 nm 795 mm2 6,850,000
Apple A10X Fusion (hexa-core 64/32-bit ARM64 "mobile SoC", SIMD, caches) 4,300,000,000 2017 Apple 10 nm 96.40 mm2 44,600,000
Centriq 2400 (64/32-bit, SIMD, caches) 18,000,000,000 2017 Qualcomm 10 nm 398 mm2 45,200,000
AMD Epyc (32-core 64-bit, SIMD, caches) 19,200,000,000 2017 AMD 14 nm 768 mm2 25,000,000
Qualcomm Snapdragon 845 (octa-core 64/32-bit ARM64 "mobile SoC", SIMD, caches) 5,300,000,000 2017 Qualcomm 10 nm 94 mm2 56,400,000
Qualcomm Snapdragon 850 (octa-core 64/32-bit ARM64 "mobile SoC", SIMD, caches) 5,300,000,000 2017 Qualcomm 10 nm 94 mm2 56,400,000
HiSilicon Kirin 710 (octa-core ARM64 "mobile SoC", SIMD, caches) 5,500,000,000 2018 Huawei 12 nm ? ?
Apple A12 Bionic (hexa-core ARM64 "mobile SoC", SIMD, caches) 6,900,000,000
 2018 Apple 7 nm 83.27 mm2 82,900,000
HiSilicon Kirin 980 (octa-core ARM64 "mobile SoC", SIMD, caches) 6,900,000,000 2018 Huawei 7 nm 74.13 mm2 93,100,000
Qualcomm Snapdragon 8cx / SCX8180 (octa-core ARM64 "mobile SoC", SIMD, caches) 8,500,000,000 2018 Qualcomm 7 nm 112 mm2 75,900,000
Apple A12X Bionic (octa-core 64/32-bit ARM64 "mobile SoC", SIMD, caches) 10,000,000,000 2018 Apple 7 nm 122 mm2 82,000,000
Fujitsu A64FX (64/32-bit, SIMD, caches) 8,786,000,000 2018 Fujitsu 7 nm ? ?
Tegra Xavier SoC (64/32-bit) 9,000,000,000 2018 Nvidia 12 nm 350 mm2 25,700,000
Qualcomm Snapdragon 855 (octa-core 64/32-bit ARM64 "mobile SoC", SIMD, caches) 6,700,000,000 2018 Qualcomm 7 nm 73 mm2 91,800,000
AMD Zen 2 core (0.5 MB L2 + 4 MB L3 cache) 475,000,000 2019 AMD 7 nm 7.83 mm2 60,664,000
AMD Zen 2 CCX (core complex: 4 cores, 16 MB L3 cache) 1,900,000,000 2019 AMD 7 nm 31.32 mm2 60,664,000
AMD Zen 2 CCD (core complex die: 8 cores, 32 MB L3 cache) 3,800,000,000 2019 AMD 7 nm 74 mm2 51,350,000
AMD Zen 2 client I/O die 2,090,000,000 2019 AMD 12 nm 125 mm2 16,720,000
AMD Zen 2 server I/O die 8,340,000,000 2019 AMD 12 nm 416 mm2 20,050,000
AMD Zen 2 Renoir die 9,800,000,000 2019 AMD 7 nm 156 mm2 62,820,000
AMD Ryzen 7 3700X (64-bit, SIMD, caches, I/O die) 5,990,000,000 2019 AMD 7 & 12 nm
(TSMC) 		199
(74+125) mm2 		30,100,000
HiSilicon Kirin 990 4G 8,000,000,000 2019 Huawei 7 nm 90.00 mm2 89,000,000
Apple A13 (hexa-core 64-bit ARM64 "mobile SoC", SIMD, caches) 8,500,000,000
 2019 Apple 7 nm 98.48 mm2 86,300,000
IBM z15 CP chip (12 cores, 256 MB L3 cache) 9,200,000,000 2019 IBM 14 nm 696 mm2 13,220,000
IBM z15 SC chip (960 MB L4 cache) 12,200,000,000 2019 IBM 14 nm 696 mm2 17,530,000
AMD Ryzen 9 3900X (64-bit, SIMD, caches, I/O die) 9,890,000,000
 2019 AMD 7 & 12 nm
(TSMC) 		273 mm2 36,230,000
HiSilicon Kirin 990 5G 10,300,000,000 2019 Huawei 7 nm 113.31 mm2 90,900,000
AWS Graviton2 (64-bit, 64-core ARM-based, SIMD, caches) 30,000,000,000 2019 Amazon 7 nm ? ?
AMD Epyc Rome (64-bit, SIMD, caches) 39,540,000,000
 2019 AMD 7 & 12 nm
(TSMC) 		1,008 mm2 39,226,000
Qualcomm Snapdragon 865 (octa-core 64/32-bit ARM64 "mobile SoC", SIMD, caches) 10,300,000,000 2019 Qualcomm 7 nm 83.54 mm2 123,300,000
TI Jacinto TDA4VM (ARM A72, DSP, SRAM) 3,500,000,000 2020 Texas Instruments 16 nm ? ?
Apple A14 Bionic (hexa-core 64-bit ARM64 "mobile SoC", SIMD, caches) 11,800,000,000 2020 Apple 5 nm 88 mm2 134,100,000
Apple M1 (octa-core 64-bit ARM64 SoC, SIMD, caches) 16,000,000,000 2020 Apple 5 nm 119 mm2 134,500,000
HiSilicon Kirin 9000 15,300,000,000
 2020 Huawei 5 nm 114 mm2 134,200,000
AMD Zen 3 CCX (core complex unit: 8 cores, 32 MB L3 cache) 4,080,000,000 2020 AMD 7 nm 68 mm2 60,000,000
AMD Zen 3 CCD (core complex die) 4,150,000,000 2020 AMD 7 nm 81 mm2 51,230,000
Core 11th gen Rocket Lake (8-core 64-bit, SIMD, large caches) 6,000,000,000+ 2021 Intel 14 nm +++ 14 nm 276 mm2 37,500,000 or 21,800,000+
AMD Ryzen 7 5800H (64-bit, SIMD, caches, I/O and GPU) 10,700,000,000 2021 AMD 7 nm 180 mm2 59,440,000
AMD Epyc 7763 (Milan) (64-core, 64-bit) ? 2021 AMD 7 & 12 nm
(TSMC) 		1,064 mm2
(8×81+416) 		?
Apple A15 15,000,000,000
 2021 Apple 5 nm 107.68 mm2 139,300,000
Apple M1 Pro (10-core, 64-bit) 33,700,000,000 2021 Apple 5 nm 245 mm2 137,600,000
Apple M1 Max (10-core, 64-bit) 57,000,000,000
 2021 Apple 5 nm 420.2 mm2 135,600,000
Power10 dual-chip module (30 SMT8 cores or 60 SMT4 cores) 36,000,000,000 2021 IBM 7 nm 1,204 mm2 29,900,000
Dimensity 9000 (ARM64 SoC) 15,300,000,000
 2021 Mediatek 4 nm(TSMC N4) ? ?
Apple A16 (ARM64 SoC) 16,000,000,000
 2022 Apple 4 nm ? ?
Apple M1 Ultra (dual-chip module, 2×10 cores) 114,000,000,000
 2022 Apple 5 nm 840.5 mm2 135,600,000
AMD Epyc 7773X (Milan-X) (multi-chip module, 64 cores, 768 MB L3 cache) 26,000,000,000 + Milan 2022 AMD 7 & 12 nm
(TSMC) 		1,352 mm2
(Milan + 8×36) 		?
IBM Telum dual-chip module (2×8 cores, 2×256 MB cache) 45,000,000,000
 2022 IBM 7 nm (Samsung) 1,060 mm2 42,450,000
Apple M2 (deca-core 64-bit ARM64 SoC, SIMD, caches) 20,000,000,000 2022 Apple 5 nm ? ?
Dimensity 9200 (ARM64 SoC) 17,000,000,000
 2022 Mediatek 4 nm(TSMC N4P) ? ?
Qualcomm Snapdragon 8 Gen 2 (octa-core ARM64 "mobile SoC", SIMD, caches) 16,000,000,000 2022 Qualcomm 4 nm 268 mm2 59,701,492
AMD EPYC Genoa (4th gen/9004 series) 13-chip module (up to 96 cores and 384 MB (L3) + 96 MB (L2) cache) 90,000,000,000
 2022 AMD 5 nm (CCD)
6 nm (IOD) 		1,263.34 mm2
12×72.225 (CCD)
396.64 (IOD)
 71,240,000
HiSilicon Kirin 9000s 9,510,000,000 2023 Huawei 7 nm 107 mm2 107,690,000
Apple M4 (deca-core 64-bit ARM64 SoC, SIMD, caches) 28,000,000,000 2024 Apple 3 nm ? ?
Apple M3 (octa-core 64-bit ARM64 SoC, SIMD, caches) 25,000,000,000 2023 Apple 3 nm ? ?
Apple M3 Pro (dodeca-core 64-bit ARM64 SoC, SIMD, caches) 37,000,000,000 2023 Apple 3 nm ? ?
Apple M3 Max (hexadeca-core 64-bit ARM64 SoC, SIMD, caches) 92,000,000,000 2023 Apple 3 nm ? ?
Apple A17 19,000,000,000
 2023 Apple 3 nm 103.8 mm2 183,044,315
Sapphire Rapids quad-chip module (up to 60 cores and 112.5 MB of cache) 44,000,000,000–
48,000,000,000 		2023 Intel 10 nm ESF (Intel 7) 1,600 mm2 27,500,000–
30,000,000
Apple M2 Pro (12-core 64-bit ARM64 SoC, SIMD, caches) 40,000,000,000 2023 Apple 5 nm ? ?
Apple M2 Max (12-core 64-bit ARM64 SoC, SIMD, caches) 67,000,000,000 2023 Apple 5 nm ? ?
Apple M2 Ultra (two M2 Max dies) 134,000,000,000 2023 Apple 5 nm ? ?
AMD Epyc Bergamo (4th gen/97X4 series) 9-chip module (up to 128 cores and 256 MB (L3) + 128 MB (L2) cache) 82,000,000,000 2023 AMD 5 nm (CCD)
6 nm (IOD) 		? ?
AMD Instinct MI300A (multi-chip module, 24 cores, 128 GB GPU memory + 256 MB (LLC/L3) cache) 146,000,000,000 2023 AMD 5 nm (CCD, GCD)
6 nm (IOD) 		1,017 mm2 144,000,000
Processor Transistor count Year Designer Process
(nm) 		Area (mm2) Transistor
density
(tr./mm2)

GPUs

Una unidad de procesamiento gráfico (GPU) es un circuito electrónico especializado diseñado para manipular y alterar rápidamente la memoria para acelerar la creación de imágenes en un búfer de cuadros destinado a ser exportado a una pantalla.

El término "diseñador" hace referencia a la empresa tecnológica que diseña la lógica del chip del circuito integrado (como Nvidia y AMD). El término "fabricante" ("Fab.") hace referencia a la empresa de semiconductores que fabrica el chip utilizando su proceso de fabricación de semiconductores en una fundición (como TSMC y Samsung Semiconductor). La cantidad de transistores en un chip depende del proceso de fabricación del fabricante, y los nodos de semiconductores más pequeños suelen permitir una mayor densidad de transistores y, por lo tanto, una mayor cantidad de transistores.

La memoria de acceso aleatorio (RAM) que viene con las GPU (como VRAM, SGRAM o HBM) aumenta en gran medida el recuento total de transistores, y la memoria suele representar la mayoría de los transistores en una tarjeta gráfica. Por ejemplo, la Tesla P100 de Nvidia tiene 15 mil millones de FinFET (16 nm) en la GPU además de 16 GB de memoria HBM2, lo que suma un total de aproximadamente 150 mil millones de MOSFET en la tarjeta gráfica. La siguiente tabla no incluye la memoria. Para conocer el recuento de transistores de memoria, consulte la sección Memoria a continuación.

Procesador Conteo transistor Año Diseñador(s) Fab(s) Proceso Zona Transistor
densidad
(tr./mm2) 		Ref.
μPD7220 GDC 40.000 1982 NEC NEC 5.000 nm ??
ARTC HD63484 60.000 1984 Hitachi Hitachi ???
CBM Agnus 21.000. 1985 Commodore CSG 5.000 nm ??
YM7101 VDP 100.000 1988 Yamaha, Sega Yamaha ???
Tom & Jerry 750.000 1993 Flare IBM ???
VDP1 1,000,000 1994 Sega Hitachi 500 nm ??
Sony GPU 1,000,000 1994 Toshiba LSI 500 nm ??
NV1 1,000,000 1995 Nvidia, Sega SGS 500 nm 90 mm211.
Coprocesador de Realidad 2.600.000 1996 SGI NEC 350 nm 81 mm232,100
PowerVR 1.200,000 1996 VideoLogic NEC 350 nm ??
Gráficos Voodoo 1,000,000 1996 3dfx TSMC 500 nm ??
Voodoo Rush 1,000,000 1997 3dfx TSMC 500 nm ??
NV3 3.500.000 1997 Nvidia SGS, TSMC 350 nm 90 mm238,900
i740 3.500.000 1998 Intel, Real3D Real3D 350 nm ??
Voodoo 2 4,000,000 1998 3dfx TSMC 350 nm ??
Voodoo Rush 4,000,000 1998 3dfx TSMC 350 nm ??
NV4 7,000,000 1998 Nvidia TSMC 350 nm 90 mm278.000
PowerVR2 CLX2 10,000,000 1998 VideoLogic NEC 250 nm 116 mm286.200
PowerVR2 PMX1 6,000,000 1999 VideoLogic NEC 250 nm ??
Rage 128 8,000,000 1999 ATI TSMC, UMC 250 nm 70 mm2114.000
Voodoo 3 8.100.000 1999 3dfx TSMC 250 nm ??
Sintetizador de gráficos 43,000,000 1999 Sony, Toshiba Sony, Toshiba 180 nm 279 mm2154.000
NV5 15,000,000 1999 Nvidia TSMC 250 nm 90 mm2167.000
NV10 17,000,000 1999 Nvidia TSMC 220 nm 111 mm2153.000
NV11 20,000,000 2000 Nvidia TSMC 180 nm 65 mm2308.000
NV15 25,000,000 2000 Nvidia TSMC 180 nm 81 mm2309.000
Voodoo 4 14,000,000 2000 3dfx TSMC 220 nm ??
Voodoo 5 28,000,000 2000 3dfx TSMC 220 nm ??
R100 30,000,000 2000 ATI TSMC 180 nm 97 mm2309.000
Flipper 51,000,000 2000 ArtX NEC 180 nm 106 mm2481.
PowerVR3 KYRO 14,000,000 2001 Imaginación ST 250 nm ??
PowerVR3 KYRO II 15,000,000 2001 Imaginación ST 180 nm
NV2A 60,000,000 2001 Nvidia TSMC 150 nm ??
NV20 57,000,000 2001 Nvidia TSMC 150 nm 128 mm2445.000
NV25 63,000,000 2002 Nvidia TSMC 150 nm 142 mm2444.000
NV28 36,000,000 2002 Nvidia TSMC 150 nm 101 mm2356.000
NV17/18 29,000,000 2002 Nvidia TSMC 150 nm 65 mm2446.000
R200 60,000,000 2001 ATI TSMC 150 nm 68 mm2882.000
R300 107,000,000 2002 ATI TSMC 150 nm 218 mm2490.800
R360 117 millones 2003 ATI TSMC 150 nm 218 mm2536.700
NV34 45,000,000 2003 Nvidia TSMC 150 nm 124 mm2363.000
NV34b 45,000,000 2004 Nvidia TSMC 140 nm 91 mm2495.000
NV30 125 millones 2003 Nvidia TSMC 130 nm 199 mm2628.000
NV31 80,000,000 2003 Nvidia TSMC 130 nm 121 mm2661.
NV35/38 135.000 2003 Nvidia TSMC 130 nm 207 mm2652.000
NV36 82,000,000 2003 Nvidia IBM 130 nm 133 mm2617.000
R480 160.000 2004 ATI TSMC 130 nm 297 mm2538.700
NV40 222,000,000 2004 Nvidia IBM 130 nm 305 mm2727.900
NV44 75,000,000 2004 Nvidia IBM 130 nm 110 mm2681.800
NV41 222,000,000 2005 Nvidia TSMC 110 nm 225 mm2986,700
NV42 198,000,000 2005 Nvidia TSMC 110 nm 222 mm2891.900
NV43 146 millones 2005 Nvidia TSMC 110 nm 154 mm2948.100
G70 303 millones 2005 Nvidia TSMC, Chartered 110 nm 333 mm2909.900
Xenos 232,000,000 2005 ATI TSMC 90 m 182 mm21,275.000
RSX Reality Synthesizer 300.000 2005 Nvidia, Sony Sony 90 m 186 mm21,613.000
R520 321,000,000 2005 ATI TSMC 90 m 288 mm2115.000
RV530 157 millones 2005 ATI TSMC 90 m 150 mm21.047.000
RV515 107,000,000 2005 ATI TSMC 90 m 100 mm21.070.000
R580 384,000,000 2006 ATI TSMC 90 m 352 mm211.091.
G71 278,000,000 2006 Nvidia TSMC 90 m 196 mm21.418.000
G72 112 millones 2006 Nvidia TSMC 90 m 81 mm21,383.000
G73 177.000 2006 Nvidia TSMC 90 m 125 mm21.416.000
G80 681,000,000 2006 Nvidia TSMC 90 m 480 mm21.419.000
G86 Tesla 210 millones 2007 Nvidia TSMC 80 nm 127 mm21.654.
G84 Tesla 289,000,000 2007 Nvidia TSMC 80 nm 169 mm21,710,000
RV560 330.000 2006 ATI TSMC 80 nm 230 mm21,435.000
R600 700,000,000 2007 ATI TSMC 80 nm 420 mm21,667.000
RV610 180,000,000 2007 ATI TSMC 65 nm 85 mm22.1118.000
RV630 390.000 2007 ATI TSMC 65 nm 153 mm22.549.000
G92 754,000,000 2007 Nvidia TSMC, UMC 65 nm 324 mm22.327.000
G94 Tesla 505 millones 2008 Nvidia TSMC 65 nm 240 mm22,104.000
G96 Tesla 314,000,000 2008 Nvidia TSMC 65 nm 144 mm22.181.
G98 Tesla 210 millones 2008 Nvidia TSMC 65 nm 86 mm22,442.000
GT200 1.400 millones 2008 Nvidia TSMC 65 nm 576 mm22.431.
RV620 181,000,000 2008 ATI TSMC 55 nm 67 mm22.701.
RV635 378,000,000 2008 ATI TSMC 55 nm 135 mm22.800.000
RV710 242,000,000 2008 ATI TSMC 55 nm 73 mm23.315.000
RV730 514,000,000 2008 ATI TSMC 55 nm 146 mm23.521.
RV670 666,000,000 2008 ATI TSMC 55 nm 192 mm23.469.000
RV770 956,000,000 2008 ATI TSMC 55 nm 256 mm23.734.000
RV790 959,000,000 2008 ATI TSMC 55 nm 282 mm23.401.000.
G92b Tesla 754,000,000 2008 Nvidia TSMC, UMC 55 nm 260 mm22.900.000
G94b Tesla 505 millones 2008 Nvidia TSMC, UMC 55 nm 196 mm22.577.000
G96b Tesla 314,000,000 2008 Nvidia TSMC, UMC 55 nm 121 mm22.595.000
GT200b Tesla 1.400 millones 2008 Nvidia TSMC, UMC 55 nm 470 mm22.979.000
GT218 Tesla 260,000,000 2009 Nvidia TSMC 40 nm 57 mm24.561.
GT216 Tesla 486.000 2009 Nvidia TSMC 40 nm 100 mm24.860.000
GT215 Tesla 727,000,000 2009 Nvidia TSMC 40 nm 144 mm25.049.000
RV740 826,000,000 2009 ATI TSMC 40 nm 137 mm26.029.000
Cypress RV870 2.154 millones 2009 ATI TSMC 40 nm 334 mm26.449.000
Juniper RV840 1.040 millones 2009 ATI TSMC 40 nm 166 mm26.265.000
Redwood RV830 627,000,000 2010 AMD (ATI) TSMC 40 nm 104 mm26.029.000
Cedar RV810 292,000,000 2010 AMD TSMC 40 nm 59 mm24.949.000
Cayman RV970 2.640 millones 2010 AMD TSMC 40 nm 389 mm26.789.000
Barts RV940 1.700 millones 2010 AMD TSMC 40 nm 255 mm26667.000
Turks RV930 716,000,000 2011 AMD TSMC 40 nm 118 mm26.068.000
Caicos RV910 370,000,000 2011 AMD TSMC 40 nm 67 mm25.522.000
GF100 Fermi 3.200,000,000 2010 Nvidia TSMC 40 nm 526 mm26.084.000
GF110 Fermi 3.000 millones 2010 Nvidia TSMC 40 nm 520 mm25.769.000
GF104 Fermi 1.950 millones 2011 Nvidia TSMC 40 nm 332 mm25.873.000
GF106 Fermi 1.170 millones 2010 Nvidia TSMC 40 nm 238 mm24.916.000
GF108 Fermi 585.000 2011 Nvidia TSMC 40 nm 116 mm25.043.000
GF119 Fermi 292,000,000 2011 Nvidia TSMC 40 nm 79 mm23.696.000
Tahiti GCN1 4,312,711,873 2011 AMD TSMC 28 nm 365 mm211.820.000
Cabo Verde GCN1 1.500 millones 2012 AMD TSMC 28 nm 123 mm212.200.000
Pitcairn GCN1 2.800 millones 2012 AMD TSMC 28 nm 212 mm213,210.000
GK110 Kepler 7.080 millones de dólares 2012 Nvidia TSMC 28 nm 561 mm212.620.000
GK104 Kepler 3.540 millones 2012 Nvidia TSMC 28 nm 294 mm212.040.000
GK106 Kepler 2.540 millones 2012 Nvidia TSMC 28 nm 221 mm211,490,000
GK107 Kepler 1.270 millones de dólares 2012 Nvidia TSMC 28 nm 118 mm210.760.000
GK208 Kepler 1.020 millones 2013 Nvidia TSMC 28 nm 79 mm212.910.000
Oland GCN1 1.040 millones 2013 AMD TSMC 28 nm 90 mm211.560.000
Bonaire GCN2 2.080 millones 2013 AMD TSMC 28 nm 160 mm213,000,000
Durango (Xbox One) 4.800 millones 2013 AMD TSMC 28 nm 375 mm212.800.000
Liverpool (PlayStation 4) ?2013 AMD TSMC 28 nm 348 mm2?
Hawaii GCN2 6.300 millones 2013 AMD TSMC 28 nm 438 mm214,380,000
GM200 Maxwell 8.000 millones 2015 Nvidia TSMC 28 nm 601 mm213,310.000
GM204 Maxwell 5.200,000,000 2014 Nvidia TSMC 28 nm 398 mm213,070,000
GM206 Maxwell 2.940 millones 2014 Nvidia TSMC 28 nm 228 mm212.890.000
GM107 Maxwell 1.870,000,000 2014 Nvidia TSMC 28 nm 148 mm212.640.000
Tonga GCN3 5.000 millones 2014 AMD TSMC, GlobalFoundries 28 nm 366 mm213.660.000
Fiji GCN3 8.900 millones 2015 AMD TSMC 28 nm 596 mm214,930,000
Durango 2 (Xbox One S) 5.000 millones 2016 AMD TSMC 16 nm 240 mm220.830.000
Neo (PlayStation 4 Pro) 5.700 millones 2016 AMD TSMC 16 nm 325 mm217.540.000
Ellesmere/Polaris 10 GCN4 5.700 millones 2016 AMD Samsung, GlobalFoundries 14 nm 232 mm224,570.000
Baffin/Polaris 11 GCN4 3.000 millones 2016 AMD Samsung, GlobalFoundries 14 nm 123 mm224.390.000
Lexa/Polaris 12 GCN4 2.200 millones 2017 AMD Samsung, GlobalFoundries 14 nm 101 mm221,780.000
GP100 Pascal 15.300 millones 2016 Nvidia TSMC, Samsung 16 nm 610 mm225,080,000
GP102 Pascal 11.800 millones 2016 Nvidia TSMC, Samsung 16 nm 471 mm225,050.000
GP104 Pascal 7.200 millones 2016 Nvidia TSMC 16 nm 314 mm222.930.000
GP106 Pascal 4.400.000 2016 Nvidia TSMC 16 nm 200 mm222,000,000
GP107 Pascal 3.300 millones 2016 Nvidia Samsung 14 nm 132 mm225,000,000
GP108 Pascal 1.850 millones 2017 Nvidia Samsung 14 nm 74 mm225,000,000
Escorpio (Xbox One X) 6.600 millones 2017 AMD TSMC 16 nm 367 mm217.980.000
Vega 10 GCN5 12.500 millones 2017 AMD Samsung, GlobalFoundries 14 nm 484 mm225.830.000
GV100 Volta 21.100 millones 2017 Nvidia TSMC 12 nm 815 mm225.890.0
TU102 Turing 18.600 millones 2018 Nvidia TSMC 12 nm 754 mm224,670,000
TU104 Turing 13.600 millones 2018 Nvidia TSMC 12 nm 545 mm224.950.000
TU106 Turing 10.800 millones 2018 Nvidia TSMC 12 nm 445 mm224.270.000
Turing TU116 6.600 millones 2019 Nvidia TSMC 12 nm 284 mm223.240.000
TU117 Turing 4.700 millones 2019 Nvidia TSMC 12 nm 200 mm223.500.000
Vega 20 GCN5 13.230 millones 2018 AMD TSMC 7 nm 331 mm239.970.000
Navi 10 RDNA 10.300 millones 2019 AMD TSMC 7 nm 251 mm241.040.000
Navi 12 RDNA ?2020 AMD TSMC 7 nm ??
Navi 14 RDNA 6.400 millones 2019 AMD TSMC 7 nm 158 mm240.510.000
Arcturus CDNA 25.600 millones 2020 AMD TSMC 7 nm 750 mm234,100,000
GA100 Ampere 54.200 millones 2020 Nvidia TSMC 7 nm 826 mm265.620.000
GA102 Ampere 28.300 millones 2020 Nvidia Samsung 8 nm 628 mm245,035.000
GA103 Ampere 22.000.000 2022 Nvidia Samsung 8 nm 496 mm244,400,000
GA104 Ampere 17.400.000 2020 Nvidia Samsung 8 nm 392 mm244.390.000
GA106 Ampere 12.000 millones de dólares 2021 Nvidia Samsung 8 nm 276 mm243.480.000
GA107 Ampere 8.700 millones 2021 Nvidia Samsung 8 nm 200 mm243.500,000
Navi 21 RDNA2 26.800,000,000 2020 AMD TSMC 7 nm 520 mm251.540.000
Navi 22 RDNA2 17.200 millones 2021 AMD TSMC 7 nm 335 mm251.340.000
Navi 23 RDNA2 11.060,000,000 2021 AMD TSMC 7 nm 237 mm246,670,000
Navi 24 RDNA2 5.400.000 2022 AMD TSMC 6 nm 107 mm250.470.000
Aldebaran CDNA2 58.200 millones (MCM) 2021 AMD TSMC 6 nm 1448-1474 mm2
1480 mm2
1490–1580 mm2		39,500,000–40,200,000
39,200,000
36,800,000–39,100,000
GH100 Hopper 80,000,000,000 2022 Nvidia TSMC 4 nm 814 mm298.280.000
AD102 Ada Lovelace 76.300 millones 2022 Nvidia TSMC 4 nm 608,4 mm2125.4411.
AD103 Ada Lovelace 45.900 millones 2022 Nvidia TSMC 4 nm 378,6 mm2121.240.000
AD104 Ada Lovelace 35.800 millones 2022 Nvidia TSMC 4 nm 294,5 mm2121.560.000
AD106 Ada Lovelace ?2023 Nvidia TSMC 4 nm 190 mm2?
AD107 Ada Lovelace ?2023 Nvidia TSMC 4 nm 146 mm2?
Navi 31 RDNA3 57.700.000 (MCM)
45.400.000 (GCD)
6×2,050,000,000 (MCD) 		2022 AMD TSMC 5 nm (GCD)
6 nm (MCD) 		531 mm2 (MCM)
306 mm2 (GCD)
6×37.5 mm2 (MCD) 		109.200,000 (MCM)
132.400,000 (GCD)
54.640.000 (MCD)
Navi 32 RDNA3 28.100 millones (MCM) 2023 AMD TSMC 5 nm (GCD)
6 nm (MCD) 		350 mm2 (MCM)
200 mm2 (GCD)
4×37.5 mm2 (MCD) 		80.200.000 (MCM)
Navi 33 RDNA3 13.300 millones 2023 AMD TSMC 6 nm 204 mm265,200,000
Aqua Vanjaram CDNA3 153.000 millones (MCM) 2023 AMD TSMC 5 nm (GCD)
6 nm (MCD) 		??
GB200 Grace Blackwell 208.000 millones 2024 Nvidia TSMC 4 nm ??
Procesador Conteo transistor Año Diseñador(s) Fab(s) Proceso MOS Zona Transistor
densidad
(tr./mm2) 		Ref.

FPGA

Una matriz de puertas programables en campo (FPGA) es un circuito integrado diseñado para que lo configure un cliente o un diseñador después de la fabricación.

FPGA Conteo transistor Fecha de presentación Diseñador Fabricantes Proceso Zona Densidad transistor, tr./mm2Ref.
Virtex 70,000,000 1997 Xilinx
Virtex-E 200,000,000 1998 Xilinx
Virtex-II 350.000 2000 Xilinx 130 nm
Virtex-II PRO 430.000 2002 Xilinx
Virtex-4 1.000.000 2004 Xilinx 90 m
Virtex-5 1.100 millones 2006 Xilinx TSMC 65 nm
Stratix IV 2.500 millones 2008 Altera TSMC 40 nm
Stratix V 3.800,000,000 2011 Altera TSMC 28 nm
Arria 10 5.300 millones 2014 Altera TSMC 20 nm
Virtex-7 2000T 6.800 millones 2011 Xilinx TSMC 28 nm
Stratix 10 SX 2800 17.000 millones TBD Intel Intel 14 nm 560 mm230.400.000
Virtex-Ultrascale VU440 20.000 millones Q1 2015 Xilinx TSMC 20 nm
Virtex-Ultrascale+ VU19P 35.000 millones 2020 Xilinx TSMC 16 nm 900 mm238.900,000
Versal VC1902 37.000 millones 2H 2019 Xilinx TSMC 7 nm
Stratix 10 GX 10M 43.300 millones Q4 2019 Intel Intel 14 nm 1.400 mm230.930.000
Versal VP1802 92.000 millones 2021 ?Xilinx TSMC 7 nm

Memoria

La memoria semiconductora es un dispositivo de almacenamiento electrónico de datos, que se utiliza a menudo como memoria de ordenador, implementado en circuitos integrados. Casi todas las memorias semiconductoras desde la década de 1970 han utilizado MOSFET (transistores MOS), que sustituyeron a los transistores de unión bipolar anteriores. Existen dos tipos principales de memoria semiconductora: la memoria de acceso aleatorio (RAM) y la memoria no volátil (NVM). A su vez, existen dos tipos principales de RAM: la memoria de acceso aleatorio dinámica (DRAM) y la memoria de acceso aleatorio estática (SRAM), así como dos tipos principales de NVM: la memoria flash y la memoria de sólo lectura (ROM).

La SRAM CMOS típica consta de seis transistores por celda. Para la DRAM, es común la estructura 1T1C, que significa un transistor y un condensador. El condensador, cargado o no, se utiliza para almacenar 1 o 0. En la memoria flash, los datos se almacenan en puertas flotantes y se detecta la resistencia del transistor para interpretar los datos almacenados. Dependiendo de la escala fina en la que se pueda separar la resistencia, un transistor puede almacenar hasta tres bits, lo que significa ocho niveles distintos de resistencia posibles por transistor. Sin embargo, una escala más fina conlleva el costo de los problemas de repetibilidad y, por lo tanto, de confiabilidad. Por lo general, se utiliza una memoria flash MLC de 2 bits de baja calidad para las unidades flash, por lo que una unidad flash de 16 GB contiene aproximadamente 64 mil millones de transistores.

Para los chips SRAM, las celdas de seis transistores (seis transistores por bit) eran el estándar. Los chips DRAM de principios de los años 70 tenían celdas de tres transistores (tres transistores por bit), antes de que las celdas de un solo transistor (un transistor por bit) se volvieran estándar desde la era de la DRAM de 4 Kb a mediados de los años 70. En la memoria flash de un solo nivel, cada celda contiene un MOSFET de puerta flotante (un transistor por bit), mientras que la memoria flash de varios niveles contiene 2, 3 o 4 bits por transistor.

Los chips de memoria flash se suelen apilar en capas, hasta 128 capas en producción y 136 capas administradas, y están disponibles en dispositivos de usuario final de hasta 69 capas de los fabricantes.

Memoria de acceso aleatorio (RAM)
Chip name Capacidad (bits) Tipo de memoria Conteo transistor Fecha de presentación Fabricante(s) Proceso Zona Transistor
densidad
(tr./mm2) 		Ref.
— 1-bit SRAM (cell) 6 1963 Fairchild — — ?
— 1-bit DRAM (cell) 1 1965 Toshiba — — ?
?8-bit SRAM (bipolar) 48 1965 SDS, Signetics ???
SP95 16-bit SRAM (bipolar) 80 1965 IBM ???
TMC3162 16-bit SRAM (TTL) 96 1966 Transitron — ??
??SRAM (MOS) ?1966 NEC ???
256-bit DRAM (IC) 256 1968 Fairchild ???
64-bit SRAM (PMOS) 384 1968 Fairchild ???
144-bit SRAM (NMOS) 864 1968 NEC
1101 256-bit SRAM (PMOS) 1,536 1969 Intel 12.000 nm ??
1102 1 Kb DRAM (PMOS) 3.072 1970 Intel, Honeywell ???
1103 1 Kb DRAM (PMOS) 3.072 1970 Intel 8.000 nm 10 mm2307
μPD403 1 Kb DRAM (NMOS) 3.072 1971 NEC ???
?2 Kb DRAM (PMOS) 6144 1971 Instrumento general ?12,7 mm2484
2102 1 Kb SRAM (NMOS) 6144 1972 Intel ???
?8 Kb DRAM (PMOS) 8.192 1973 IBM ?18,8 mm2436
5101 1 Kb SRAM (CMOS) 6144 1974 Intel ???
2116 16 Kb DRAM (NMOS) 16.384 1975 Intel ???
2114 4 Kb SRAM (NMOS) 24,576 1976 Intel ???
?4 Kb SRAM (CMOS) 24,576 1977 Toshiba ???
64 Kb DRAM (NMOS) 65.536 1977 NTT ?35,4 mm21851
DRAM (VMOS) 65.536 1979 Siemens ?25,2 mm22601
16 Kb SRAM (CMOS) 98.304 1980 Hitachi, Toshiba ???
256 Kb DRAM (NMOS) 262,144 1980 NEC 1.500 nm 41,6 mm26302
NTT 1.000 nm 34,4 mm27620
64 Kb SRAM (CMOS) 393,216 1980 Matsushita ???
288 Kb DRAM 294,912 1981 IBM ?25 mm211.800
64 Kb SRAM (NMOS) 393,216 1982 Intel 1.500 nm ??
256 Kb SRAM (CMOS) 1.572.864 1984 Toshiba 1.200 nm ??
8 Mb DRAM 8.388.608 5 de enero de 1984Hitachi ???
16 Mb DRAM (CMOS) 16,777,216 1987 NTT 700 nm 148 mm2113.400
4 Mb SRAM (CMOS) 25,165,824 1990 NEC, Toshiba, Hitachi, Mitsubishi ???
64 Mb DRAM (CMOS) 67.108.864 1991 Matsushita, Mitsubishi, Fujitsu, Toshiba 400 m
KM48SL2000 16 Mb SDRAM 16,777,216 1992 Samsung ???
?16 Mb SRAM (CMOS) 100,663,296 1992 Fujitsu, NEC 400 m ??
256 Mb DRAM (CMOS) 268,435,456 1993 Hitachi, NEC 250 nm
1 Gb DRAM 1.073.741.824 9 de enero de 1995NEC 250 nm ??
Hitachi 160 nm ??
SDRAM 1.073.741.824 1996 Mitsubishi 150 nm ??
SDRAM (SOI) 1.073.741.824 1997 Hyundai ???
4 Gb DRAM (4-bit) 1.073.741.824 1997 NEC 150 nm ??
DRAM 4.294.967.296 1998 Hyundai ???
8 Gb SDRAM (DDR3) 8.589.934.992 Abril de 2008Samsung 50 nm ??
16 Gb SDRAM (DDR3) 17.179.869.184 2008
32 Gb SDRAM (HBM2) 34,359,738,368 2016 Samsung 20 nm ??
64 Gb SDRAM (HBM2) 68.719.476.736 2017
128 Gb SDRAM (DDR4) 137,438,953,472 2018 Samsung 10 nm ??
?RRAM (3DSoC) ?2019 SkyWater Technology 90 m ??
Memoria Flash
Chip name Capacidad (bits) Tipo de flash FGMOS transistor count Fecha de presentación Fabricante(s) Proceso Zona Transistor
densidad
(tr./mm2) 		Ref.
?256 Kb NOR 262,144 1985 Toshiba 2.000 nm ??
1 Mb NOR 1.048.576 1989 Seeq, Intel ?
4 Mb NAND 4,194,304 1989 Toshiba 1.000 nm
16 Mb NOR 16,777,216 1991 Mitsubishi 600 nm
DD28F032SA 32 Mb NOR 33,554,432 1993 Intel ?280 mm2120.000
?64 Mb NOR 67.108.864 1994 NEC 400 m ??
NAND 67.108.864 1996 Hitachi
128 Mb NAND 134,217,728 1996 Samsung, Hitachi ?
256 Mb NAND 268,435,456 1999 Hitachi, Toshiba 250 nm
512 Mb NAND 536.870.912 2000 Toshiba ???
1 Gb 2-bit NAND 536.870.912 2001 Samsung ???
Toshiba, SanDisk 160 nm ??
2 Gb NAND 2,147,483,648 2002 Samsung, Toshiba ???
8 Gb NAND 8.589.934.992 2004 Samsung 60 nm ??
16 Gb NAND 17.179.869.184 2005 Samsung 50 nm ??
32 Gb NAND 34,359,738,368 2006 Samsung 40 nm
THGAM 128 Gb Stacked NAND 128.000 millones Abril de 2007Toshiba 56 nm 252 mm2507,900,000
THGBM 256 Gb Stacked NAND 256.000 millones 2008 Toshiba 43 nm 353 mm2725.200.000
THGBM2 1 Tb NAND de 4 bits 256.000 millones 2010 Toshiba 32 nm 374 mm2684,500,000
KLMCG8GE4A 512 Gb NAND de 2 bits 256.000 millones 2011 Samsung ?192 mm21.333 millones
KLUFG8R1EM 4 Tb 3 bits V-NAND 1,365,333,333,504 2017 Samsung ?150 mm29.102,000,000
eUFS (1 TB) 8 Tb 4 bits V-NAND 2.048.000 millones 2019 Samsung ?150 mm213.650 millones
?1 Tb 232L TLC NAND muere 333,333,333,333 2022 Micrones ?68,5 mm2
( array de memoria) 		4.870 millones de dólares
(14,6 Gbit/mm2)
?16 Tb 232L paquete 5,333,333,333 2022 Micrones ?68,5 mm2
( array de memoria) 		77.900,000,000
(16×14.6 Gbit/mm2)
Sólo lectura (ROM)
Chip name Capacidad (bits) Tipo ROM Conteo transistor Fecha de presentación Fabricante(s) Proceso Zona Ref.
??PROM ?1956 Arma — ?
1 Kb ROM (MOS) 1.024 1965 Microelectrónica general ??
3301 1 Kb ROM (bipolar) 1.024 1969 Intel — ?
1702 2 Kb EPROM (MOS) 2.048 1971 Intel ?15 mm2
?4 Kb ROM (MOS) 4.096 1974 AMD, Instrumento General ??
2708 8 Kb EPROM (MOS) 8.192 1975 Intel ??
?2 Kb EEPROM (MOS) 2.048 1976 Toshiba ??
μCOM-43 ROM 16 Kb PROM (PMOS) 16.000 1977 NEC ??
2716 16 Kb EPROM (TTL) 16.384 1977 Intel — ?
EA8316F 16 Kb ROM (NMOS) 16.384 1978 Arrays electrónicos ?436 mm2
2732 32 Kb EPROM 32.768 1978 Intel ??
2364 64 Kb ROM 65.536 1978 Intel ??
2764 64 Kb EPROM 65.536 1981 Intel 3.500 nm ?
27128 128 Kb EPROM 131.072 1982 Intel ?
27256 256 Kb EPROM (HMOS) 262,144 1983 Intel ??
?256 Kb EPROM (CMOS) 262,144 1983 Fujitsu ??
512 Kb EPROM (NMOS) 524.288 1984 AMD 1.700 nm ?
27512 512 Kb EPROM (HMOS) 524.288 1984 Intel ??
?1 Mb EPROM (CMOS) 1.048.576 1984 NEC 1.200 nm ?
4 Mb EPROM (CMOS) 4,194,304 1987 Toshiba 800 nm
16 Mb EPROM (CMOS) 16,777,216 1990 NEC 600 nm
MROM 16,777,216 1995 AKM, Hitachi ??

Computadoras transistoras

Parte de una jaula de tarjeta IBM 7070 poblada con tarjetas estándar de sistema modular

Antes de que se inventaran los transistores, los relés se utilizaban en las máquinas de tabulación comerciales y en los primeros ordenadores experimentales. El primer ordenador digital programable y totalmente automático del mundo, el ordenador Z3 de 1941 con una longitud de palabra de 22 bits, tenía 2.600 relés y funcionaba a una frecuencia de reloj de unos 4-5 Hz. El ordenador de números complejos de 1940 tenía menos de 500 relés, pero no era totalmente programable. Los primeros ordenadores prácticos utilizaban tubos de vacío y lógica de diodos de estado sólido. El ENIAC tenía 18.000 tubos de vacío, 7.200 diodos de cristal y 1.500 relés, y muchos de los tubos de vacío contenían dos elementos de triodo.

La segunda generación de ordenadores fueron ordenadores de transistores que incorporaban placas llenas de transistores discretos, diodos de estado sólido y núcleos de memoria magnética. Se cree que el ordenador de transistores de 48 bits experimental de 1953, desarrollado en la Universidad de Manchester, fue el primer ordenador de transistores que entró en funcionamiento en cualquier parte del mundo (el prototipo tenía 92 transistores de contacto puntual y 550 diodos). Una versión posterior, la máquina de 1955, tenía un total de 250 transistores de unión y 1.300 diodos de contacto puntual. El ordenador también utilizaba una pequeña cantidad de tubos en su generador de reloj, por lo que no fue el primero completamente transistorizado. El ETL Mark III, desarrollado en el Laboratorio Electrotécnico en 1956, puede haber sido el primer ordenador electrónico basado en transistores que utilizó el método de programa almacenado. Tenía alrededor de 130 transistores de contacto puntual y unos 1.800 diodos de germanio que se utilizaban como elementos lógicos, y estaban alojados en 300 paquetes enchufables que se podían introducir y extraer. El IBM 7070 de arquitectura decimal de 1958 fue el primer ordenador de transistores totalmente programable. Tenía unos 30.000 transistores de germanio de unión de aleación y 22.000 diodos de germanio, en aproximadamente 14.000 tarjetas de Sistema Modular Estándar (SMS). El MOBIDIC de 1959, abreviatura de "Ordenador DIgital MÓVIL", de 12.000 libras (6,0 toneladas cortas) montado en el remolque de un camión semirremolque, era un ordenador transistorizado para datos del campo de batalla.

La tercera generación de computadoras utilizaba circuitos integrados (CI). La computadora de guía Apollo de 15 bits de 1962 utilizaba "unos 4.000 circuitos de tipo G" (puerta NOR de 3 entradas) para unos 12.000 transistores más 32.000 resistencias. El IBM System/360, presentado en 1964, utilizaba transistores discretos en paquetes de circuitos híbridos. La CPU PDP-8 de 12 bits de 1965 tenía 1409 transistores discretos y más de 10.000 diodos, en muchas tarjetas. Las versiones posteriores, a partir de la PDP-8/I de 1968, utilizaban circuitos integrados. La PDP-8 se volvió a implementar más tarde como microprocesador con el nombre de Intersil 6100, véase más abajo.

La siguiente generación de computadoras fueron las microcomputadoras, comenzando con la Intel 4004 de 1971, que utilizaba transistores MOS. Se utilizaron en computadoras domésticas o computadoras personales (PC).

Esta lista incluye las primeras computadoras con transistores (segunda generación) y las computadoras basadas en circuitos integrados (tercera generación) de las décadas de 1950 y 1960.

Computadora Conteo transistor Año Fabricantes Notas Ref.
Transistor Computer 92 1953 University of Manchester Transistores de punto contacto, 550 diodos. Falta de capacidad de programa almacenada.
TRADIC 700 1954 Bell Labs Transistores de contacto con puntos
Computación Transistor (tamaño completo) 250 1955 University of Manchester Discreta transistores punto-contacto, 1.300 diodos
IBM 608 3.000 1955 IBM Transistores alemanes
ETL Mark III 130 1956 Laboratorio Electrotécnico Transistores de contacto de puntos, 1.800 diodos, capacidad de programa almacenada
Metrovick 950 200 1956 Metropolitan-Vickers Transistores de unión discretos
NEC NEAC-2201 600 1958 NEC Transistores alemanes
Hitachi MARS-1 1.000 1958 Hitachi
IBM 7070 30.000 1958 IBM Transistores de germanio de aleación-junción, 22.000 diodos
Matsushita MADIC-I 400 1959 Matsushita Transistores bipolares
NEC NEAC-2203 2.579 1959 NEC
Toshiba TOSBAC-2100 5.000 1959 Toshiba
IBM 7090 50.000 1959 IBM Transistores de germanio discretos
PDP-1 2.700 1959 Digital Equipment Corporation Transistores discretos
Olivetti Elea 9003 ? 1959 Olivetti 300.000 transistores discretos y diodos
Mitsubishi MELCOM 1101 3.500 1960 Mitsubishi Transistores alemanes
M18 FADAC 1.600 1960 Autonetics Transistores discretos
CPU de IBM 7030 Stretch 169.100 1961 IBM La computadora más rápida del mundo de 1961 a 1964
D-17B 1,521 1962 Autonetics Transistores discretos
NEC NEAC-L2 16.000 1964 NEC Ge transistors
CDC 6600 (computador central) 400.000 1964 Control Data Corporation La computadora más rápida del mundo desde 1964 hasta 1969
IBM System/360 ? 1964 IBM Circuitos híbridos
PDP-8 "Straight-8" 1.409 1965 Digital Equipment Corporation transistores discretos, 10.000 diodos
PDP-8/S 1.001 1966 Digital Equipment Corporation transistores discretos, diodos
PDP-8/I 1.409 1968 Digital Equipment Corporation Circuitos TTL de 74 series
Apollo Guidance Computer Block I 12.300 1966 Raytheon / MIT Laboratorio de Instrumentación 4,100 ICs, cada uno que contiene una puerta NOR de 3 entradas. (Block II tenía 2.800 dobles 3 entradas de puertas NOR ICs.)

Funciones logísticas

El recuento de transistores para funciones lógicas genéricas se basa en la implementación estática de CMOS.

Función Conteo transistor Ref.
NO 2
Buffer 4
NAND 2-input 4
NOR 2-input 4
Y 2 entradas 6
O 2 entradas 6
NAND 3-input 6
NOR 3-input 6
XOR 2-input 6
XNOR 2-input 8
MUX 2 entradas con TG 6
MUX 4 entradas con TG 18
NO MUX 2 entradas 8
MUX 4-input 24
Escalera completa de 1 bit 24
1-bit adder-subtractor 48
Y... 6
Latch, D gated 8
Flip-flop, borde activado dinámica D con reset 12
Multiplicador de 8 bits 3.000
Multiplicador de 16 bits 9.000
Multiplicador de 32 bits 21.000.
integración en pequeña escala 2 a 100
Integración a mediana escala 100–500
integración a gran escala 500 a 20 000
integración a gran escala 20.000 a 1.000 millones
integración a escala ultragrande 1,000,000

Sistemas paralelos

Históricamente, cada elemento de procesamiento en los primeros sistemas paralelos (como todas las CPU de la época) era una computadora en serie construida a partir de múltiples chips. A medida que aumenta la cantidad de transistores por chip, cada elemento de procesamiento podría construirse a partir de menos chips y, más adelante, cada chip de procesador multinúcleo podría contener más elementos de procesamiento.

Goodyear MPP: (1983?) procesadores de 8 píxeles por chip, entre 3.000 y 8.000 transistores por chip.

Brunel University Scape (elemento de procesamiento de matriz de un solo chip): (1983) procesadores de 256 píxeles por chip, entre 120.000 y 140.000 transistores por chip.

Motor de banda ancha celular: (2006) con 9 núcleos por chip, tenía 234 millones de transistores por chip.

Otros dispositivos

Tipo de dispositivo Nombre del dispositivo Conteo transistor Fecha de presentación Diseñador(s) Fabricante(s) Proceso MOS Zona Densidad transistor, tr./mm2Ref.
Motor de aprendizaje profundo / UIP Coloso GC2 23.600 millones 2018 Graphcore TSMC 16 nm ~800 mm229.500,000
Motor de aprendizaje profundo / UIP Wafer Scale Engine 1.200.000 millones de dólares 2019 Cerebras TSMC 16 nm 46,225 mm225.960.000
Motor de aprendizaje profundo / UIP Wafer Scale Engine 2 2.600.000 millones 2020 Cerebras TSMC 7 nm 46,225 mm256.250.000
Interruptor de red NVLink4 NVSwitch 25.100,000,000 2022 Nvidia TSMC N4 (4 nm) 294 mm285.370.000

Densidad transistor

La densidad de transistores es la cantidad de transistores que se fabrican por unidad de área, que normalmente se mide en términos de la cantidad de transistores por milímetro cuadrado (mm2). La densidad de transistores generalmente se correlaciona con la longitud de la compuerta de un nodo semiconductor (también conocido como proceso de fabricación de semiconductores), que normalmente se mide en nanómetros (nm). A partir de 2019, el nodo semiconductor con la mayor densidad de transistores es el nodo de 5 nanómetros de TSMC, con 171,3 millones de transistores por milímetro cuadrado (tenga en cuenta que esto corresponde a un espaciado transistor-transistor de 76,4 nm, mucho mayor que el relativo e insignificante "5 nm")

Nodos MOSFET

Nodos semiconductores
Node name Densidad transistor (transistores/mm2) Año de producción Proceso MOSFET Fabricante(s) Ref.
??1960 20.000 nm PMOS Bell Labs
??1960 20.000 nm NMOS
??1963 ?CMOS Fairchild
??1964 ?PMOS Microelectrónica general
??1968 20.000 nm CMOS RCA
??1969 12.000 nm PMOS Intel
??1970 10.000 nm CMOS RCA
?300 1970 8.000 nm PMOS Intel
??1971 10.000 nm PMOS Intel
?480 1971 ?PMOS Instrumento general
??1973 ?NMOS Instrumentos de Texas
?220 1973 ?NMOS Mostek
??1973 7.500 nm NMOS NEC
??1973 6.000 nm PMOS Toshiba
??1976 5.000 nm NMOS Hitachi, Intel
??1976 5.000 nm CMOS RCA
??1976 4.000 nm NMOS Zilog
??1976 3.000 nm NMOS Intel
?1.850 1977 ?NMOS NTT
??1978 3.000 nm CMOS Hitachi
??1978 2.500 nm NMOS Instrumentos de Texas
??1978 2.000 nm NMOS NEC, NTT
?2.600 1979 ?VMOS Siemens
?7,280 1979 1.000 nm NMOS NTT
?7,620 1980 1.000 nm NMOS NTT
??1983 2.000 nm CMOS Toshiba
??1983 1.500 nm CMOS Intel
??1983 1.200 nm CMOS Intel
??1984 800 nm CMOS NTT
??1987 700 nm CMOS Fujitsu
??1989 600 nm CMOS Mitsubishi, NEC, Toshiba
??1989 500 nm CMOS Hitachi, Mitsubishi, NEC, Toshiba
??1991 400 m CMOS Matsushita, Mitsubishi, Fujitsu, Toshiba
??1993 350 nm CMOS Sony
??1993 250 nm CMOS Hitachi, NEC
3LM 32.000 1994 350 nm CMOS NEC
??1995 160 nm CMOS Hitachi
??1996 150 nm CMOS Mitsubishi
TSMC 180 nm ?1998 180 nm CMOS TSMC
CS80 ?1999 180 nm CMOS Fujitsu
??1999 180 nm CMOS Intel, Sony, Toshiba
CS85 ?1999 170 nm CMOS Fujitsu
Samsung 140 nm ?1999 140 nm CMOS Samsung
??2001 130 nm CMOS Fujitsu, Intel
Samsung 100 nm ?2001 100 nm CMOS Samsung
??2002 90 m CMOS Sony, Toshiba, Samsung
CS100 ?2003 90 m CMOS Fujitsu
Intel 90 nm 1.450.000 2004 90 m CMOS Intel
Samsung 80 nm ?2004 80 nm CMOS Samsung
??2004 65 nm CMOS Fujitsu, Toshiba
Samsung 60 nm ?2004 60 nm CMOS Samsung
TSMC 45 nm ?2004 45 nm CMOS TSMC
Elpida 90 nm ?2005 90 m CMOS Elpida Memory
CS200 ?2005 65 nm CMOS Fujitsu
Samsung 50 nm ?2005 50 nm CMOS Samsung
Intel 65 nm 2.080.0 2006 65 nm CMOS Intel
Samsung 40 nm ?2006 40 nm CMOS Samsung
Toshiba 56 nm ?2007 56 nm CMOS Toshiba
Matsushita 45 nm ?2007 45 nm CMOS Matsushita
Intel 45 nm 300.000 2008 45 nm CMOS Intel
Toshiba 43 nm ?2008 43 nm CMOS Toshiba
TSMC 40 nm ?2008 40 nm CMOS TSMC
Toshiba 32 nm ?2009 32 nm CMOS Toshiba
Intel 32 nm 7.500,000 2010 32 nm CMOS Intel
??2010 20 nm CMOS Hynix, Samsung
Intel 22 nm 15.300.000 2012 22 nm CMOS Intel
FMIT 20 nm ?2012 20 nm CMOS FMIT
Toshiba 19 nm ?2012 19 nm CMOS Toshiba
Hynix 16 nm ?2013 16 nm FinFET SK Hynix
TSMC 16 nm 28.880.000 2013 16 nm FinFET TSMC
Samsung 10 nm 51.820.000 2013 10 nm FinFET Samsung
Intel 14 nm 37,500,000 2014 14 nm FinFET Intel
14LP 32.940.000 2015 14 nm FinFET Samsung
TSMC 10 nm 52.510.000 2016 10 nm FinFET TSMC
12LP 36.710.000 2017 12 nm FinFET GlobalFoundries, Samsung
N7FF 96.500,000

101.850.000

2017 7 nm FinFET TSMC
8LPP 61,180.000 2018 8 nm FinFET Samsung
7LPE 95.300,000 2018 7 nm FinFET Samsung
Intel 10 nm 100.760.000

106.100.000

2018 10 nm FinFET Intel
5LPE 126,530,000

133.560.000 134.900,000

2018 5 nm FinFET Samsung
N7FF+ 113,900,000 2019 7 nm FinFET TSMC
CLN5FF 171.300.000

185.460.000

2019 5 nm FinFET TSMC
Intel 7 100.760.000

106.100.000

2021 7 nm FinFET Intel
4LPE 145.700.000 2021 4 nm FinFET Samsung
N4 196,600,000 2021 4 nm FinFET TSMC
N4P 196,600,000 2022 4 nm FinFET TSMC
3GAE 202.850.000 2022 3 nm MBCFET Samsung
N3 314,730,000 2022 3 nm FinFET TSMC
N4X ?2023 4 nm FinFET TSMC
N3E ?2023 3 nm FinFET TSMC
3GAP ?2023 3 nm MBCFET Samsung
Intel 4 160.000 2023 4 nm FinFET Intel
Intel 3 ?2023 3 nm FinFET Intel
Intel 20A ?2024 2 nm RibbonFET Intel
Intel 18A ?2025 sub-2 nm RibbonFET Intel
2GAP ?2025 2 nm MBCFET Samsung
N2 ?2025 2 nm GAAFET TSMC
Samsung 1.4 nm ?2027 1.4 nm ?Samsung

Véase también

  • Cuenta de puerta, una métrica alternativa
  • Escalada de Dennard
  • Industria electrónica
  • Circuito integrado
  • Lista de dispositivos electrónicos más vendidos
  • Lista de ejemplos de escala semiconductora
  • MOSFET
  • Semiconductor
  • Dispositivo semiconductor
  • Fabricación de dispositivo semiconductor
  • Industria semiconductora
  • Transistor
  • Cerebras Systems

Notas

  1. ^ Declasificado 1998
  2. ^ El TMS1000 es un microcontrolador, el recuento transistor incluye controladores de memoria y entrada/salida, no sólo la CPU.
  3. ^ 3,510 sin transistores de arranque de modo de agotamiento
  4. ^ 6,813 sin transistores de arranque de modo de agotamiento
  5. ^ 3.900,000,000 chiplet de núcleo muere, 2.090,000,000 I/O die
  6. ^ a b Estimación
  7. ^ Versal Premium se confirma que se envía en 1H 2021 pero nada se mencionó sobre el VP1802 en particular. Por lo general, Xilinx hace noticias separadas para la liberación de sus dispositivos más grandes, por lo que es probable que el VP1802 sea liberado más adelante.
  8. ^ "Intelligence Processing Unit"

Referencias

  1. ^ Khosla, Robin (2017). Alternate high-k dielectrics for next-generation CMOS logic and memory technology (PhD). IIT Mandi.
  2. ^ a b Hruska, Joel (August 2019). "Cerebras Systems Unveils 1.2 Trillion Transistor Wafer-Scale Processor for AI". extremetech.com. Retrieved September 6, 2019.
  3. ^ a b Feldman, Michael (August 2019). "Machine Learning chip breaks new ground with waferscale integration". nextplatform.com. Retrieved September 6, 2019.
  4. ^ a b Cutress, Ian (August 2019). "Hot Chips 31 Live Blogs: Cerebras' 1.2 Trillion Transistor Deep Learning Processor". anandtech.com. Retrieved September 6, 2019.
  5. ^ a b "A Look at Cerebras Wafer-Scale Engine: Half Square Foot Silicon Chip". WikiChip Fuse. November 16, 2019. Retrieved December 2, 2019.
  6. ^ a b Everett, Joseph (August 26, 2020). "World's largest CPU has 850,000 7 nm cores that are optimized for AI and 2.6 trillion transistors". TechReportArticles.
  7. ^ a b "Apple introduces M2 Ultra" (Press release). Apple. June 5, 2023.
  8. ^ "John Gustafson's answer to How many individual transistors are in the world's most powerful supercomputer?". Quora. Retrieved August 22, 2019.
  9. ^ Pires, Francisco (October 5, 2022). "Water-Based Chips Could be Breakthrough for Neural Networking, AI: Wetware has gained an entirely new meaning". Tom's Hardware. Retrieved October 5, 2022.
  10. ^ Laws, David (April 2, 2018). "13 Sextillion & Counting: The Long & Winding Road to the Most Frequently Manufactured Human Artifact in History". Computer History Museum.
  11. ^ Handy, Jim (May 26, 2014). "How Many Transistors Have Ever Shipped?". Forbes.
  12. ^ "1971: Microprocessor Integrates CPU Function onto a Single Chip". The Silicon Engine. Computer History Museum. Retrieved September 4, 2019.
  13. ^ a b Holt, Ray. "World's First Microprocessor". Retrieved March 5, 2016. 1st fully integrated chip set microprocessor
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